IPD06N03LA G

IPD06N03LA OptiMOS®2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS(on),max 5.7 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) P-TO252-3-11 • Superior thermal resistance • 175 °C operating temperature • dv /dt rated Type Package Ordering Code Marking IPD06N03LA P-TO252-3-11 Q67042-S4149 06N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C1) 50 T C=100 °C 50 Pulsed drain current I D,pulse T C=25 °C2) 350 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 225 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage3) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.2 Unit A mJ kV/µs ±20 V 83 W -55 ... 175 °C 55/175/56 page 1 2003-06-18 IPD06N03LA Parameter Values Symbol Conditions Unit min. typ. max. - - 1,8 minimal footprint - - 75 6 cm2 cooling area4) - - 50 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 25 - - Gate threshold voltage V GS(th) V DS=V GS, I D=40 µA 1,2 1,6 2 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0,1 1 V DS=25 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 7,5 8,4 mΩ V GS=10 V, I D=30 A - 4,8 5,7 - 1 - Ω 27 54 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 1) Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 94 A. 2) See figure 3 3) T j,max=150 °C and duty cycle D